CES2312
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D
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ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Cur...
