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CES2317

P-Channel MOSFET

Description

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other...

CET

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