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IRG4IBC30W

International Rectifier
Part Number IRG4IBC30W
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Nov 24, 2005
Detailed Description PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and ...
Datasheet PDF File IRG4IBC30W PDF File

IRG4IBC30W
IRG4IBC30W

Overview
PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.
5kV, 60s insulation voltage V • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline C VCES = 600V G E VCE(on) typ.
= 2.
1V @VGE = 15V, IC = 12 A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220 FULLPAK Absolute Maximum Ratings...


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