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HAT2201R

Renesas Technology
Part Number HAT2201R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • Hig...
Datasheet PDF File HAT2201R PDF File

HAT2201R
HAT2201R

Overview
HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 34 mΩ typ.
(at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.
3.
01 Nov.
30.
2016 Rev.
3.
01, Nov.
30.
2016, page 1 of 7 HAT2201R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 6 ID(pulse)Note1 48 Body-drain diode reverse drain current IDR 6 Avalanche current IAP Note 2 6 Avalanche energy EAR Note 2 3.
6 Channel dissipation...


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