DatasheetsPDF.com

CES2342

Chino-Excel Technology
Part Number CES2342
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2342 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 4.2A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 58mΩ...
Datasheet PDF File CES2342 PDF File

CES2342
CES2342

Overview
CES2342 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 4.
2A, RDS(ON) = 45mΩ @VGS = 10V.
RDS(ON) = 58mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 40 Units V V A A W C ±20 4.
2 15 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 1.
2006.
Sep http://www.
cetsemi.
com CES2342 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.
25A VDS = 20V, ID = 4.
2A, VGS = 10V VDD = 20V, ID = 4.
2A, VGS = 10V, RGEN = 3Ω 11 3 26 3 13.
5 1.
7 2.
8 4.
2 1.
2 25 10 55 10 18 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 4.
2A VGS = 4.
5V, ID = 3.
3A 1 37 44 680 110 65 3 45 58 V mΩ mΩ pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 1 100 -100 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 7 Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.
0 MHz Dra...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)