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CES2301

Part Number	CES2301
Manufacturer	CET
Description	P-Channel MOSFET
Published	Oct 2, 2015
Detailed Description	CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) ...
Datasheet	CES2301 PDF File

Overview

CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.
8A, RDS(ON) = 100mΩ @VGS = -4.
5V.
RDS(ON) = 150mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID -2.
8 IDM -10 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A...

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