August 1997
FDV304P Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect
transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
Features
-25 V, -0.
46 A continuous, -1.
5 A Peak.
RDS(ON) = 1.
1 Ω @ VGS = -4.
5 V RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct oper...