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FDV301N

Kexin
Part Number FDV301N
Manufacturer Kexin
Description N-Channel MOSFET
Published Jul 6, 2019
Detailed Description N-Channel MOSFET FDV301N SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0...
Datasheet PDF File FDV301N PDF File

FDV301N
FDV301N

Overview
N-Channel MOSFET FDV301N SOT-23 2.
9 +0.
1 -0.
1 0.
4 +0.
1 -0.
1 3 +0.
12.
4 -0.
1 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1 0-0.
1 +0.
10.
38 -0.
1 +0.
10.
97 -0.
1 +0.
11.
3 -0.
1 0.
55 0.
4 Unit: mm 0.
1 +0.
05 -0.
01 1.
Gate 2.
Source 3.
Drain N-Channel MOSFET FDV301N ■ Marking Marking 301 SMD Type MOSFET I D , DRAIN-SOURCE CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE N-Channel MOSFET FDV301N ■ Typical Characterisitics 0 .
5 V GS = 4.
5V 4.
0 3.
5 0.
4 3.
0 2 .
7 0.
3 2.
5 0 .
2 0 .
1 0 0 2 .
0 1.
5 0.
5 1 1.
5 2 2.
5 V , DRAIN-SOURCE VOLTAGE (V) DS 3 Figure 1.
On-Region Characteristics.
1.
8 ID = 0.
2A 1.
6 VGS = 2.
7 V 1.
4 1.
2 1 0.
8 0.
6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) R DS(on) , ON-RESISTANCE (OHM) R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 .
4 VGS = 2 .
0V 1 .
2 1 0 .
8 2 .
5 2 .
7 3 .
0 3 .
5 4 .
0 4 .
5 0 .
6 0 0.
1 0.
2 0.
3 0.
4 I D , DRAIN CURRENT (A) 0 .
5 Figure 2.
On-Resistance Variation with Drain Current and Gate Voltage.
15 12 25°C 125°C 9 ID = 0.
2A 6 3 0 2 2.
5 3 3.
5 4 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3.
On-Resistance Variation with Temperature.
0 .
2 V DS = 5.
0V 0 .
1 5 T = -55°C J 25°C 125°C 0 .
1 0 .
0 5 0 0 .
5 1 1 .
5 2 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5.
Transfer Characteristics.
2 .
5 I S, REVERSE DRAIN CURRENT (A) Figure 4.
On Resistance Variation with Gate-To-Source Voltage.
0.
5 V GS = 0V 0.
2 0.
1 0.
01 TJ = 125°C 25°C -55°C 0.
001 0.
0001 0.
2 0.
4 0.
6 0.
8 1 V SD , BODY DIODE FORW A RD VOLTAGE (V) 1.
2 Figure 6.
Body Diode Forward Voltage Variation with Source Current and Temperature.
I D, DRAIN CURRENT (A) www.
kexin.
com.
cn 3 SMD Type MOSFET V GS , GATE-SOURCE VOLTAGE (V) ID , DRAIN CURRENT (A) ■ Typical Characterisitics N-Channel MOSFET FDV301N 5 ID = 0.
2A 4 3 VDS = 5V 10V 15V 2 1 0 0 0.
1 0.
2 0.
3 0.
4 0.
5 0.
6 Q g , GATE CHARGE (nC) Figure 7.
Gate Charge Characteristics.
CAPACITANCE (pF) 30 20 10 Ciss Coss 5 3 2 f = 1 MHz VGS = 0V 1 0 .
1 0.
5 1 2 5 VDS , DRAIN TO S...


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