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FDV304P

Fairchild Semiconductor
Part Number FDV304P
Manufacturer Fairchild Semiconductor
Description Digital FET/ P-Channel
Published Mar 30, 2005
Detailed Description August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors...
Datasheet PDF File FDV304P PDF File

FDV304P
FDV304P

Overview
August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
Features -25 V, -0.
46 A continuous, -1.
5 A Peak.
RDS(ON) = 1.
1 Ω @ VGS = -4.
5 V RDS(ON) = 1.
5 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Compact industry standard SOT-23 surface mount package.
SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other wise noted FDV304P -25 -8 Units V V A - Continuous - Pulsed -0.
46 -1.
5 0.
35 -55 to 150 6.
0 Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) W °C kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W © 1997 Fairchild Semiconductor Corporation FDV304P Rev.
E1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 oC VDS = -20 V, VGS = 0 V TJ = 55°C IGSS Gate - Body Leakage Current (Note) -25 -22 -1 -10 -100 V mV /o C µA µA nA mV /o C -1.
5 1.
5 1.
1 2 A V ∆BVDSS/∆TJ IDSS VGS = -8 V, VDS= 0 V ID = -250 µA, Referenced to 25 oC VDS = VGS, ID = -250 µ...


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