DatasheetsPDF.com

FDV301N

Fairchild Semiconductor
Part Number FDV301N
Manufacturer Fairchild Semiconductor
Description N-Channel Digital FET
Published Mar 30, 2005
Detailed Description FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor ...
Datasheet PDF File FDV301N PDF File

FDV301N
FDV301N



Overview
FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors.
Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
June 2009 Features 25 V, 0.
22 A continuous, 0.
5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.
7 V RDS(ON) = 4 Ω @ VGS= 4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
06V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET.
SOT-23 Mark:301 SuperSOTTM-6 SuperSOTTM-8 SO-8 D GS SOT-223 SOIC-16 INVERTER APPLICATION Vcc D OUT IN G S GND Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS, VCC Drain-Source Voltage, Power Supply Voltage VGSS, VI Gate-Source Voltage, VIN ID, IO Drain/Output Current - Continuous PD TJ,TSTG ESD Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient FDV301N 25 8 0.
22 0.
5 0.
35 -55 to 150 6.
0 357 Units V V A W °C kV °C/W ©2009 Fairchild Semiconductor Corporation FDV301N Rev.
F1 Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions IO (off) VI (off) VI (on) RO (on) Zero Input Voltage Output Current Input Voltage Output to Ground Resistance VCC = 20 V, VI = 0 V VCC = 5 V, IO = 10 µA VO = 0.
3 V, IO = 0.
005 A VI = 2.
7 V, IO = 0.
2 A Min Typ Max Units 1 µA 0.
5 V 1V 45 Ω Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)