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FDV302P

Fairchild Semiconductor
Part Number FDV302P
Manufacturer Fairchild Semiconductor
Description Digital FET/ P-Channel
Published Mar 30, 2005
Detailed Description October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effec...
Datasheet PDF File FDV302P PDF File

FDV302P
FDV302P

Overview
October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors.
Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
Features -25 V, -0.
12 A continuous, -0.
5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.
7 V RDS(ON) = 10 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Compact industry standard SOT-23 surface mount package.
Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
SOT-23 Mark:302 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless otherwise noted FDV302P -25 -8 Units V V A - Continuous - Pulsed -0.
12 -0.
5 0.
35 -55 to 150 6.
0 Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) W °C kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W © 1997 Fairchild Semiconductor Corporation FDV302P REV.
F Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 o C VDS = -20 V, VGS = 0 V TJ = 55°C IGSS Gate - Body Leakage Current (Note) -25 -20 -1 -10 -100 V mV / oC µA µA nA mV /...


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