DatasheetsPDF.com

FDV303N

ON Semiconductor
Part Number FDV303N
Manufacturer ON Semiconductor
Description N-Channel Digital FET
Published Mar 23, 2020
Detailed Description Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produ...
Datasheet PDF File FDV303N PDF File

FDV303N
FDV303N

Overview
Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on−state resistance at low gate drive conditions.
This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.
It can be used as an inverter or for high−efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.
This device has excellent on−state resistance even at gate drive voltages as low as 2.
5 V.
Features • 25 V, 0.
68 A Continuous, 2 A Peak ♦ RDS(ON) = 0.
45 Ω @ VGS = 4.
5 V ♦ RDS(ON) = 0.
6 Ω @ VGS= 2.
7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V • Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body Model • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant www.
onsemi.
com SOT−23 (TO−236) CASE 318−08 STYLE 21 MARKING DIAGRAM Drain 3 A303MG G 1 Gate 2 Source Aor blank = One/two character Loacation Code 303 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) * Location code can be blank or with characters indicating manufacturing location * Date Code orientation and overbar may vary depending upon manufacturing location.
PIN ASSIGNMENT D GS SOT−23 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1997 March, 2020 − Rev.
5 1 Publication Order Number: FDV303N/D FDV303N MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain−Source Voltage, Power Supply Voltage Gate−Source Voltage, VIN Drain/Output Current − Continuous − Pulsed PD Maximum Power Dissipation TJ, TSTG ESD Op...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)