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FDV303N

Fairchild Semiconductor
Part Number FDV303N
Manufacturer Fairchild Semiconductor
Description N-Channel Digital FET
Published Dec 29, 2016
Detailed Description FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produce...
Datasheet PDF File FDV303N PDF File

FDV303N
FDV303N


Overview
FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions.
This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells.
It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.
This device has excellent on-state resistance even at gate drive voltages as low as 2.
5 volts.
July 2014 Features 25 V, 0.
68 A continuous, 2 A Peak.
RDS(ON) = 0.
45 Ω @ VGS = 4.
5 V RDS(ON) = 0.
6 Ω @ VGS= 2.
7 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model Compact industry standard SOT-23 surface mount pa...


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