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FDV303N

Kexin
Part Number FDV303N
Manufacturer Kexin
Description N-Channel MOSFET
Published Feb 22, 2020
Detailed Description SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = ...
Datasheet PDF File FDV303N PDF File

FDV303N
FDV303N

Overview
SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.
68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.
5V) ● RDS(ON) ＜ 600mΩ (VGS = 2.
7V) D +0.
12.
4 -0.
1 SOT-23 2.
9 +0.
1 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1 +0.
10.
97 -0.
1 +0.
11.
3 -0.
1 0.
55 0.
4 Unit: mm 0.
1 +0.
05 -0.
01 1.
Gate 2.
Source 3.
Drain 0-0.
1 +0.
10.
38 -0.
1 GS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.
Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ESD ID IDM PD RthJA TJ Tstg Rating 25 ±8 6 0.
68 2 350 357 150 -55 to 150 Unit V KV A mW ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET N-Channel MOSFET FDV303N (KDV303N) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note.
1) On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD Test Conditions ID=250μA, VGS=0V VDS=20V, VGS=0V VDS=20V, VGS=0V, TJ=55℃ VDS=0V, VGS=±8 V VDS=VGS , ID=250μA VGS=4.
5V, ID=0.
5A VGS=4.
5V, ID=0.
5A TJ=125℃ VGS=2.
7V, ID=0.
2A VGS=2.
7V, VDS=5V (Note.
1) VDS=5V, ID=0.
5A (Note.
1) VGS=0V, VDS=10V, f=1MHz VGS=4.
5V, VDS=5V, ID=0.
5A (Note.
1) VGS=4.
5V, VDS=6V,ID=0.
5A,RG=50Ω (Note.
1) IS=0.
5A,VGS=0V Min 25 0.
65 0.
5 Typ Max Unit V 1 μA 10 ±100 nA 1.
5 V 450 800 mΩ 600 A 1.
45 S 50 28 pF 9 1.
64 2.
3 0.
38 nC 0.
45 36 8.
5 18 17 30 ns 13 25 0.
3 A 1.
2 V Note.
1: Pulse Te...


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