TPC8206
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
· · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7.
0 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (N...