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TPC8210

Toshiba Semiconductor
Part Number TPC8210
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description TPC8210 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion ...
Datasheet PDF File TPC8210 PDF File

TPC8210
TPC8210

Overview
TPC8210 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 13 S (typ.
) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 8 32 1.
5 W PD(2) 1.
1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.
08 g (typ.
) Drain power dissipation (t = 10 s) (Note 2b) PD (1) 0.
75 W Circuit Configuration 8 7 6 5 PD (2) EAS IAR EAR Tch Tstg 0.
45 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 83.
2 8 0.
1 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
...


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