TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Power Management Switch High Speed Switching Applications · · · Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate...
Toshiba Semiconductor