TPCA8103
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCA8103
0.
5±0.
1
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
6.
0±0.
3
Unit: mm
1.
27 8 0.
4±0.
1 5 0.
05 M A
• • • • •
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.
1 mΩ (typ.
) High forward transfer admittance: |Yfs| =45S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
5.
0±0.
2
0.
15±0.
05
1 0.
95±0.
05
4
0.
595 A
5.
0±0.
2
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sour...