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TPCA8104

Part Number	TPCA8104
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 16, 2010
Detailed Description	TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applicatio...
Datasheet	TPCA8104 PDF File

Overview

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.
) • High forward transfer admittance:|Yfs| = 50 S (typ.
) • Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) • Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1 mA) 0.
5±0.
1 1.
27 8 0.
4±0.
1 5 Unit: mm 0.
05 M A 6 .
0 ± 0 .
3 5 .
0 ± 0 .
2 0.
15±0.
05 0.
95±0.
05 1 4 5 .
0 ± 0 .
2 0.
595 A 0.
166±0.
05 S 0.
05 S 1 4 1.
1±0.
2 0 .
6 ± 0 .
1 3 .
5 ± 0 .
2 Absolute Maximum Ratings (Ta = 25°C) 4.
25±0.
2 Characteristic Symbol Rating Unit 8 5 0.
8±0.
1 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Note: For Notes 1 to 4, see the next page.
-60 V -60 V ±20 V -40 A -120 45 2.
8 W 1.
6 116 mJ -40 A 4.
5 mJ 150 °C −55 to 150 °C 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.
080 g (typ.
) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
...

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