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TPCA8103

Toshiba Semiconductor
Part Number TPCA8103
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Published Nov 27, 2006
Detailed Description www.DataSheet4U.com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lit...
Datasheet PDF File TPCA8103 PDF File

TPCA8103
TPCA8103

Overview
www.
DataSheet4U.
com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.
5±0.
1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.
0±0.
3 Unit: mm 1.
27 8 0.
4±0.
1 5 0.
05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.
1 mΩ (typ.
) High forward transfer admittance: |Yfs| =45S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 5.
0±0.
2 0.
15±0.
05 1 0.
95±0.
05 4 0.
595 A 5.
0±0.
2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25°C) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating −30 −30 ±20 − 40 −120 45 2.
8 Unit V V V A W W S 1 4 0.
6±0.
1 4.
25±0.
2 8 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN 5 0.
8±0.
1 Pulsed (No...


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