DatasheetsPDF.com

TPCA8108

Part Number	TPCA8108
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Sep 20, 2014
Detailed Description	TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8108 High-Side Switching Application...
Datasheet	TPCA8108 PDF File

Overview

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8108 High-Side Switching Applications Motor Drive Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.
7 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 41S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) • Enhancement mode: Vth = −1.
5 to −3.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) 0.
5±0.
1 1.
27 0.
4±0.
1 8 5 Unit: mm 0.
05 M A 6.
0±0.
3 5.
0±0.
2 0.
15±0.
05 0.
95±0.
05 1 4 5.
0±0.
2 0.
595 A 0.
166±0.
05 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit −40 V −40 V ±20 V −40 A −120 45 W 2.
8 W 1.
6 W 148 mJ −40 A 4.
5 mJ 150 °C −55 to 150 °C S 0.
05 S 1 4 1.
1±0.
2 0.
6±0.
1 3.
5±0.
2 4.
25±0.
2 8 1,2,3:SOURCE 5,6,7,8:DRAIN 5 0.
8±0.
1 4:GATE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.
080 g (typ.
) Circuit Configuration 8765 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high 1234 temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliab...

Similar Datasheet

TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type - Toshiba Semiconductor
TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type - Toshiba Semiconductor
TPCA8104 Silicon P-Channel MOSFET - Toshiba Semiconductor
TPCA8105 Silicon P-Channel MOSFET - Toshiba Semiconductor
TPCA8106 Silicon P-Channel MOSFET - Toshiba Semiconductor
TPCA8107-H Silicon P-Channel MOSFET - Toshiba Semiconductor
TPCA8108 Silicon P-Channel MOSFET - Toshiba Semiconductor
TPCA8109 Silicon P Channel MOS Type - Toshiba Semiconductor
TPCA8120 Silicon P-Channel MOSFET - Toshiba
TPCA8121 Field Effect Transistor - Toshiba

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)