DatasheetsPDF.com

TPCA8102

Toshiba Semiconductor
Part Number TPCA8102
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Published Nov 27, 2006
Detailed Description www.DataSheet4U.com TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 0.5±0.1 Lit...
Datasheet PDF File TPCA8102 PDF File

TPCA8102
TPCA8102

Overview
www.
DataSheet4U.
com TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 0.
5±0.
1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.
0±0.
3 Unit: mm 1.
27 8 0.
4±0.
1 5 0.
05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.
5mΩ (typ.
) High forward transfer admittance: |Yfs| = 60S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 5.
0±0.
2 0.
15±0.
05 1 0.
95±0.
05 4 0.
595 A 5.
0±0.
2 S 1 4 4.
25±0.
2 Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) VDSS VDGR VGSS ID IDP PD PD PD EAS IAR −30 −30 ±20 − 40 −120 45 2.
8 V V V A W W 8 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN 5 0.
8±0.
1 Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ― ― 2-5Q1A Drain power dissipation Drain power dissipation Drain po...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)