DatasheetsPDF.com

TPCA8105

Toshiba Semiconductor
Part Number TPCA8105
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Porta...
Datasheet PDF File TPCA8105 PDF File

TPCA8105
TPCA8105

Overview
TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications • Small footprint due to compact and slim package • Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.
) (VGS = − 4.
5V） • High forward transfer admittance :|Yfs| = 14 S (typ.
) • Low leakage current : IDSS = −10 μA (VDS = −12 V) • Enhancement mode : Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA ) 0.
5±0.
1 1.
27 8 0.
4±0.
1 5 Unit: mm 0.
05 M A 6 .
0 ± 0 .
3 5 .
0 ± 0 .
2 0.
15±0.
05 0.
95±0.
05 1 4 5 .
0 ± 0 .
2 0.
595 A 0.
166±0.
05 S 0.
05 S 1 4 1.
1±0.
2 0 .
6 ± 0 .
1 3 .
5 ± 0 .
2 4.
25±0.
2 Absolute Maximum Ratings (Ta = 25°C) 8 5 0.
8±0.
1 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current Pulse (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)