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TPCA8121

Toshiba
Part Number TPCA8121
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8121 1. Applications • • Lithium-Ion Secondary Batteries Power Mana...
Datasheet PDF File TPCA8121 PDF File

TPCA8121
TPCA8121

Overview
TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8121 1.
Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2.
Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.
4 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 5) (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) (RGS = 20 kΩ) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating -30 -30 -20/+10 -45 -135 45 2.
8 1.
6 263 -45 175 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2011-09-27 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TPCA8121 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 2.
78 44.
6 78.
1 Unit /W /W /W ...


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