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TPCA8109

Toshiba Semiconductor
Part Number TPCA8109
Manufacturer Toshiba Semiconductor
Description Silicon P Channel MOS Type
Published Nov 6, 2012
Detailed Description TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications ...
Datasheet PDF File TPCA8109 PDF File

TPCA8109
TPCA8109

Overview
TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications 8 Unit: mm 1.
27 0.
4 ± 0.
1 5 0.
05 M A • • • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5mA) 6.
0 ± 0.
3 5.
0 ± 0.
2 • Small footprint due to small and thin package 0.
15 ± 0.
05 1 0.
95 ± 0.
05 4 0.
595 0.
166 ± 0.
05 4 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −24 −72 30 2.
8 Unit 5.
0 ± 0.
2 V V V A W W 8 5 0.
6 ± 0.
1 1 4.
25 ± 0.
2 Pulsed (Note 1) (Tc=25°C) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation (t = 10 s) (Note 2b) 1.
6 www.
DataSheet.
net/ W 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN Single...


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