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TPCA8120

Toshiba
Part Number TPCA8120
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8120 1. Applications • Lithium-Ion Secondary Batteries • Power Management Swi...
Datasheet PDF File TPCA8120 PDF File

TPCA8120
TPCA8120

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8120 1.
Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2.
Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.
4 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TPCA8120 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25/+20 Drain current (DC) (Note 1) ID -45 A Drain current (pulsed) (Note 1) IDP -135 Power dissipation (Tc = 25 ) PD 45 W Power dissipation (t = 10 s) (Note 2) PD 2.
8 W Power dissipation (t = 10 s) (Note 3) PD 1.
6 W Single-pulse avalanche energy (Note 4) EAS 263 mJ Avalanche current IAR -45 A...


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