TPCA8105
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8105
Notebook PC Applications Portable Equipment Applications
• Small footprint due to compact and slim package • Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.
)
(VGS = − 4.
5V) • High forward transfer admittance :|Yfs| = 14 S (typ.
) • Low leakage current : IDSS = −10 μA (VDS = −12 V) • Enhancement mode
: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA )
0.
5±0.
1 1.
27 8
0.
4±0.
1 5
Unit: mm
0.
05 M A
6 .
0 ± 0 .
3 5 .
0 ± 0 .
2
0.
15±0.
05
0.
95±0.
05
1
4
5 .
0 ± 0 .
2
0.
595
A 0.
166±0.
05
S
0.
05 S
1
4 1.
1±0.
2
0 .
6 ± 0 .
1 3 .
5 ± 0 .
2
4.
25±0.
2
Absolute Maximum Ratings (Ta = 25°C)
8
5 0.
8±0.
1
Chara...