TPCA8128
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS Ⅵ)
TPCA8128
Lithium Ion Battery Applications Power Management Switch Applications
8
Unit: mm
1.
27 0.
4 ± 0.
1 5 0.
05 M A
• • • •
Small footprint due to compact and slim package Low leakage current : IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode : Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5 m A )
0.
95 ± 0.
05 1 6.
0 ± 0.
3 5.
0 ± 0.
2
Low drain-source ON resistance : RDS (ON) = 3.
7 mΩ (typ.
)
0.
15 ± 0.
05
4
0.
595 A
5.
0 ± 0.
2
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg
Ra...