NX3020NAKT
29 October 2013
SO T4 16
30 V, 180 mA N-channel Trench MOSFET
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • •
Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3.
Applications
• • • •
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4.
Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C
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