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NX3020NAK

nexperia
Part Number NX3020NAK
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description NX3020NAK 30 V, single N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enh...
Datasheet PDF File NX3020NAK PDF File

NX3020NAK
NX3020NAK

Overview
NX3020NAK 30 V, single N-channel Trench MOSFET 29 October 2013 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 ; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 200 mA - 2.
7 4.
5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia NX3020NAK 30 V, single N-channel Trench MOSFET 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6.
Ordering information Table 3.
Ordering information Type number Package Name NX3020NAK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7.
Marking Table 4.
Marking codes Type number NX3020NAK Marking code [1] %CU [1] % = placeholder for manufacturing site code 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C [1] [1] [2] [1] NX3020NAK Product data sheet All information provided in this document is...


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