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NX3020NAKV

nexperia
Part Number NX3020NAKV
Manufacturer nexperia
Description Dual N-channel MOSFET
Published Jun 4, 2019
Detailed Description NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual ...
Datasheet PDF File NX3020NAKV PDF File

NX3020NAKV
NX3020NAKV

Overview
NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.
5 V; Tamb = 25 °C [1] - - 200 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.
7 4.
5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided c...


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