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NX3020NAKW

NXP Semiconductors
Part Number NX3020NAKW
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description NX3020NAKW 29 October 2013 SO T3 23 30 V, 180 mA N-channel Trench MOSFET Product data sheet 1. General description ...
Datasheet PDF File NX3020NAKW PDF File

NX3020NAKW
NX3020NAKW

Overview
NX3020NAKW 29 October 2013 SO T3 23 30 V, 180 mA N-channel Trench MOSFET Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3.
Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 30 20 180 Unit V V mA Static characteristics drain-source on-state resistance [1] - 2.
7 4.
5 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2 Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 5.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 Simplified outline 3 Graphic symbol D G SC-70 (SOT323) S 017aaa255 6.
Ordering information Table 3.
Ordering information Package Name NX3020NAKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 7.
Marking Table 4.
Marking codes Marking code [1] Type number NX3020NAKW [1] %3A % = placeholder for manufacturing site code 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C [2] [1] NX3020NAKW All information provided in this document is subject to legal d...


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