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NX3020NAKW

nexperia
Part Number NX3020NAKW
Manufacturer nexperia
Description N-channel MOSFET
Published Jun 4, 2019
Detailed Description NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel en...
Datasheet PDF File NX3020NAKW PDF File

NX3020NAKW
NX3020NAKW

Overview
NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 180 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.
7 4.
5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia NX3020NAKW 30 V, 180 m...


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