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NX3020NAKS

nexperia
Part Number NX3020NAKS
Manufacturer nexperia
Description dual N-channel MOSFET
Published Jul 28, 2019
Detailed Description NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual...
Datasheet PDF File NX3020NAKS PDF File

NX3020NAKS
NX3020NAKS

Overview
NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.
5 V; Tamb = 25 °C [1] - - 180 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.
7 4.
5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 654 Graphic symbol D1 D2 123 TSSOP6 (SOT363) G1 G2 S1 S2 017aaa256 6.
Ordering information Table 3.
Ordering information Type number Package Name NX3020NAKS TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 7.
Marking Table 4.
Marking codes Type number NX3020NAKS Marking code [1] Ua% [1] % = placeholder for manufacturing site code 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp...


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