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NX3020NAKV

NXP
Part Number NX3020NAKV
Manufacturer NXP
Description dual N-channel Trench MOSFET
Published Aug 18, 2014
Detailed Description NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1. General descri...
Datasheet PDF File NX3020NAKV PDF File

NX3020NAKV
NX3020NAKV

Overview
NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3.
Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 200 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 2.
7 4.
5 Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 5.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 Simplified outline 6 5 4 Graphic symbol D1 D2 G1 G2 SOT666 S1 S2 017aaa256 6.
Ordering information Table 3.
Ordering information Package Name NX3020NAKV SOT666 Description plastic surface-mounted package; 6 leads Version SOT666 Type number 7.
Marking Table 4.
Marking codes Marking code GB Type number NX3020NAKV 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ...


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