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NX3020NAKT

NXP Semiconductors
Part Number NX3020NAKT
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description NX3020NAKT 29 October 2013 SO T4 16 30 V, 180 mA N-channel Trench MOSFET Product data sheet 1. General description N...
Datasheet PDF File NX3020NAKT PDF File

NX3020NAKT
NX3020NAKT

Overview
NX3020NAKT 29 October 2013 SO T4 16 30 V, 180 mA N-channel Trench MOSFET Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3.
Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 30 20 180 Unit V V mA Static characteristics drain-source on-state resistance [1] - 2.
7 4.
5 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2 Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 5.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SC-75 (SOT416) S 017aaa255 6.
Ordering information Table 3.
Ordering information Package Name NX3020NAKT SC-75 Description plastic surface-mounted package; 3 leads Version SOT416 Type number 7.
Marking Table 4.
Marking codes Marking code VB Type number NX3020NAKT 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM Ptot peak drain current total power dissipation Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C Tsp = 25 °C Tj NX3020NAKT Conditions Tj = 25 °C Min -20 [1] [1] Max 30 20 180 110 720 230 285 1060 150 Unit V V mA mA mA mW mW mW °C -...


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