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NX3020NAKS

NXP
Part Number NX3020NAKS
Manufacturer NXP
Description MOSFET
Published Aug 18, 2014
Detailed Description NX3020NAKS 11 November 2013 30 V, 180 mA dual N-channel Trench MOSFET Product data sheet 1. General description Dual ...
Datasheet PDF File NX3020NAKS PDF File

NX3020NAKS
NX3020NAKS

Overview
NX3020NAKS 11 November 2013 30 V, 180 mA dual N-channel Trench MOSFET Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3.
Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
Quick reference data Table 1.
Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 180 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 2.
7 4.
5 Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .
Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 5.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 TSSOP6 (SOT363) S1 S2 017aaa256 6.
Ordering information Table 3.
Ordering information Package Name NX3020NAKS TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 7.
Marking Table 4.
Marking codes Marking code [1] Type number NX3020NAKS [1] Ua% % = placeholder for manufacturing site code 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; Tamb = 100 °C IDM Ptot NX3020NAKS Parameter Conditions...


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