NX3020NAKV
29 October 2013
SO T6 6
6
30 V, 200 mA dual N-channel Trench MOSFET
Product data sheet
1.
General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • •
Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3.
Applications
• • • •
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4.
Quick reference data
Table 1.
Symbol Per
transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.
5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj...