Part Number
|
TPC6130 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MOSFETs |
Published
|
Aug 27, 2014 |
Detailed Description
|
TPC6130
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC6130
1. Applications
• • Lithium-Ion Secondary Batteries Power Manage...
|
Datasheet
|
TPC6130
|
Overview
TPC6130
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC6130
1.
Applications
• • Lithium-Ion Secondary Batteries Power Management Switches
2.
Features
(1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ.
) (VGS = -4.
5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -0.
2 mA)
3.
Packaging and Internal Circuit
1, 2, 5, 6: Drain 3: Gate 4: Source
VS-6
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse...
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