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TPC6108

Toshiba Semiconductor
Part Number TPC6108
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) www.DataSheet4U.com TPC6108 Notebook PC App...
Datasheet PDF File TPC6108 PDF File

TPC6108
TPC6108

Overview
TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) www.
DataSheet4U.
com TPC6108 Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7.
4 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-model: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) TENTATIVE Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Drain power dissipation(t = 5 s) Drain power dissipation(t = 5 s) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 4) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −4.
5 −18 2.
2 0.
7 1.
3 −2.
25 0.
22 150 −55~150 mJ A mJ Unit V V V A Drain Drain Gate Source Drain Drain JEDEC W JEITA TOSHIBA 2-3T1A Weight: 0.
011 g (typ.
) Circuit Configuration °C °C 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient(t = 5 s) (Note 2a) Thermal resistance, channel to ambient(t = 5 s) (Note 2b) Symbol Max Unit 1 Rth (ch-a) 56.
8 °C/W 2 3 Rth (ch-a) 178.
5 °C/W Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2004-10-28 TPC6108 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge1 Gat...


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