DatasheetsPDF.com

TPC6104

Toshiba Semiconductor
Part Number TPC6104
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6104 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC A...
Datasheet PDF File TPC6104 PDF File

TPC6104
TPC6104

Overview
TPC6104 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.
) High forward transfer admittance: |Yfs| = 12 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.
5 −22 2.
2 0.
7 4.
9 −2.
75 0.
22 150 −55~150 Unit V V V A W W mJ A mJ °C °C Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA ― ― 2-3T1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.
011 g (typ.
) Circuit Configuration 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.
8 178.
5 Unit °C/W °C/W 1 2 3 Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06 TPC6104 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr ton VGS 0 V −5 V 4.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)