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TPC6105

Toshiba Semiconductor
Part Number TPC6105
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Portabl...
Datasheet PDF File TPC6105 PDF File

TPC6105
TPC6105

Overview
TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 4.
7 S (typ.
) • Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode : Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg −20 V −20 V ±8 V −2.
7 A −10.
8 2.
2 W 0.
7 W 1.
2 mJ −1.
35 A 0.
22 mJ 150 °C −55~150 °C JEDEC ― JEI...


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