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TPC6103

Toshiba Semiconductor
Part Number TPC6103
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portabl...
Datasheet PDF File TPC6103 PDF File

TPC6103
TPC6103

Overview
TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 13 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) • Enhancement mode: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) VDSS VDGR VGSS ID IDP PD PD EAS −12 V −12 V ±8 V −5.
5 A −22 2.
2 W 0.
7 W 5.
3 mJ JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.
011 g (typ.
) Avalanche current IAR Repetitive avalanche energy (Note 4) EAR Channel temperature Tch Storage temperature range T...


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