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TPC6101

Toshiba Semiconductor
Part Number TPC6101
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable ...
Datasheet PDF File TPC6101 PDF File

TPC6101
TPC6101

Overview
TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable Equipment Applications · · · · Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.
) High forward transfer admittance: |Yfs| = 8.
2 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 4) Symbol VDSS VDGR VGSS ID Rating -20 -20 ±12 -4.
5 A IDP -18 Unit V V V JEDEC JEITA ― ― 2-3T1A PD 2.
2 W TOSHIBA Weight: 0.
011 g (typ.
) PD EAS IAR EAR Tch Tstg 0.
7 3.
3 -2.
25 0.
22 150 -55 to 150 W mJ A mJ °C °C Cir...


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