TPC6113
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6113
Lithium Ion Battery Applications Power Management Switch Applications
• • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.
) ( VGS = −4.
5V) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −0.
2 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −20 −20 ±12 −5 −20 2.
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