TPC8209
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOS II)
TPC8209
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.
5 W PD(2) 1.
1 ...