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FDG313N

ON Semiconductor
Part Number FDG313N
Manufacturer ON Semiconductor
Description N-Channel Digital FET
Published Jan 23, 2023
Detailed Description FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is p...
Datasheet PDF File FDG313N PDF File

FDG313N
FDG313N

Overview
FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Applications • Load switch • Battery protection • Power management Features • 0.
95 A, 25 V.
RDS(on) = 0.
45 Ω @ VGS = 4.
5 V RDS(on) = 0.
60 Ω @ VGS = 2.
7 V.
• Low gate charge (1.
64 nC typical) • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.
5V).
• Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
• Compact industry standard SC70-6 surface mount package.
S D 1 D 2 G pin 1 SC70-6 D D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate...


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