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FDG316P

ON Semiconductor
Part Number FDG316P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 24, 2023
Detailed Description MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced...
Datasheet PDF File FDG316P PDF File

FDG316P
FDG316P

Overview
MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
Features • −1.
6 A, −30 V ♦ RDS(ON) = 0.
19 W @ VGS = −10 V ♦ RDS(ON) = 0.
30 W @ VGS = −4.
5 V • Low Gate Charge (3.
5 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant Applications • DC/DC Converter • Load Switch • Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±20 V ID Drain Current Continuous −1.
6 A (N...


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