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FDG312P

Fairchild Semiconductor
Part Number FDG312P
Manufacturer Fairchild Semiconductor
Description P-Channel 2.5V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET i...
Datasheet PDF File FDG312P PDF File

FDG312P
FDG312P

Overview
FDG312P February 1999 FDG312P P-Channel 2.
5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications.
Features • -1.
2 A, -20 V.
RDS(on) = 0.
18 Ω @ VGS = -4.
5 V RDS(on) = 0.
25 Ω @ VGS = -2.
5 V.
• • Low gate charge (3.
3 nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.
Applications • Load switch • Battery protection • Power management • D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1) Units V V A W ±8 -1.
2 -6 0.
75 0.
55 0.
48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 260 °C/W Package Outlines and Ordering Information Device Marking .
12 Device FDG312P Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©1999 Fairchild Semiconductor Corporation FDG312P Rev.
C FDG312P DMOS Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) TA = 25°C unless otherwise noted Parameter Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min Typ Max Units -20 -19 -1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on...


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