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FDG316P

Fairchild Semiconductor
Part Number FDG316P
Manufacturer Fairchild Semiconductor
Description P-Channel Logic Level PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level...
Datasheet PDF File FDG316P PDF File

FDG316P
FDG316P

Overview
FDG316P December 2001 FDG316P P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • -1.
6 A, -30 V.
RDS(ON) = 0.
19 Ω @ VGS = -10 V RDS(ON) = 0.
30 Ω @ VGS = -4.
5 V.
• • • Low gate charge (3.
5nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.
Applications • • • DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J , T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted Parameter Ratings -30 (Note 1a) Units V V A W °C ± 20 -1.
6 -6 0.
75 0.
48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Tem perature Range Thermal Characteristics R θJA Therm al Resistance, Junction-to-Am bient (Note 1b) 260 ° C/W Package Marking and Ordering Information Device Marking .
3 6 Device FDG316P Reel Size 7’’ Tape W idth 8m m Quantity 3000 units 200 1 Fairchild Semiconductor Corporation FDG316P Rev.
D FDG316P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Forward Gate-Body Leakage Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = -16 V, VDS = 0 V Min -30 Typ Max Units V Off Characteristics -34 -1 100 -100 mV/°C µA nA nA On Characteristic...


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